Dr. Deepali Jagga

Basic Details

Name

Dr. Deepali Jagga
Designation

GF

Contact

Phone (O)

NA
Phone(R)

NA
e-mail

deepalijagga@sliet.ac.in

Educational Details

Educational Qualification

B.Sc Physics (Honors): 2013-16, Delhi University, India;
M.sc Physics: 2016-18, Sant Longowal Institute of Engineering and Technology, India;
Ph.D: 2021-24, National Yang-Ming Chiao Tung University, Taiwan;
International Research Fellow: 2023 (April-December) Taiwan Semiconductor Research Institute, Taiwan.

Award

Award

Gold Medalist in MSc Physics (2016-2018) from Sant Longowal Institute of Engineering and Technology, Punjab.
Best Poster Award by Industrial Technology Research Institute at International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT), held on 04/2023 in Taiwan.
Outstanding Teaching Assistant Award at National Yang-Ming Chiao Tung University (NYCU), Taiwan, (2022-25)
Silver Jubilee Scholarship Award for Best Student of the 2013-17 batch during BSc Physics (H) from Kalindi College, Delhi University

Publications

Publications

Deepali Jagga., & Artur Useinov. (2023). Influence of electrostriction and voltage-induced screening effects on the tunnel electroresistance in tunnel junctions with composite ferroelectric barriers. Journal of Applied Physics, 134(12). DOI: https://doi.org/10.1063/5.0166078
Deepali Jagga., Vitaly I. Korepanov., Daria M. Sedlovets., & Artur Useinov. (2022). Spin-Induced Switching of Electronic State Populations in Transition Metal Polyphthalocyanines. Materials, 15(22),8098. DOI: https://doi.org/10.3390/ma15228098
Artur Useinov., Deepali Jagga., & Edward Yang Chang. (2022). Tunnel electroresistance in Hf0. 5Zr0. 5O2-based ferroelectric tunnel junctions under hysteresis: approach of the point contact model and the linearized Thomas–Fermi screening. ACS Applied Electronic Materials, 4(5), 2238-2245, DOI: 10.1021/acsaelm.2c00022
Deepali Jagga., & Artur Useinov., Vitaly I. Korepanov & Daria M. Sedlovets (2023). Magnetic anomalies in polyphthalocyanines with Fe-, Ni- and Co-magnetic centers. Physica E: Low-dimensional Systems and Nanostructures, 154, 115795. DOI: https://doi.org/10.1016/j.physe.2023.115795.
Do, H. B. C., Chung, C. H., Mai, T. T., Prasad, O. K., & Deepali Jagga (2024). Investigation of Resistive Switching of Insulating Hafnium Nitride for Nonvolatile Memory Applications. ECS Journal of Solid-State Science and Technology, 13(2), 025005. DOI: 10.1149/2162-8777/ad2ae
Deepali Jagga., & Artur Useinov. (2023, April). Thomas-Fermi interfacial screening with voltage-dependence of the screening lengths and influence of oxygen vacancies in MFTJs. International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT) (pp. 1-2). IEEE, DOI: 10.1109/VLSI-TSA/VLSI-DAT 57221.2023.10134310
Deepali Jagga., Vitaly I. Korepanov., Daria M. Sedlovets & Artur Useinov. (2023). Spin-induced metal-insulator transition and magnetic hysteresis in metal-based polyphthalocyanines. Materials Today: Proceedings. DOI: https://doi.org/10.1016/j.matpr.2023.03.131
Deepali Jagga., & Artur Useinov. (2023, August). WKB Approach for Ferroelectric Tunnel Junctions with Thomas-Fermi Voltage Dependent Screening and Electrostriction Effect.  3rd Asian Conference on Innovation in Technology (ASIANCON) (pp. 1-6). IEEE. DOI: 10.1109/ASIANCON58793.2023.10270560
Deepali Jagga., Sourav De., & Artur Useinov., (2024, March). WKB model of ferroelectric tunnel junctions for memory applications: voltage-dependent screening and electrostriction effects.  8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (pp. 1-3). IEEE. DOI: 10.1109/EDTM58488.2024.10512202

website

Website

https://scholar.google.com/citations?user=zTy_TTkAAAAJ&hl=en&oi=ao